Title :
Measurements of near infrared frequency mixing by metal-semiconductor point-contact diodes
Author :
Bava, E. ; Beverini, N. ; Carelli, G. ; De Michele, A. ; Galzerano, G. ; Maccioni, E. ; Moretti, A. ; Prevedelli, M. ; Sorrentino, E. ; Svelto, C.
Author_Institution :
Dept. of Elettronica e Informazione, Politecnico di Milano, Italy
Abstract :
We tested the performance of metal-semiconductor point-contact diodes as mixers in the near infrared region. We performed preliminary experiments in order to phase-lock two diode laser at 850 nm some hundred GHz apart. We used GaSb, InAs and InSb as semiconductor layer. The frequency bridge between the two lasers was covered by a Gunn diode frequency locked to a 1 GHz oscillator.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical frequency conversion; optical phase locked loops; point contacts; semiconductor diodes; semiconductor lasers; semiconductor-metal boundaries; 850 nm; GaSb; InAs; InSb; diode laser phase-locking; frequency bridge; frequency down-conversion; metal-semiconductor point-contact diodes; near infrared frequency mixing; optical phase-locked loop; phase-frequency detector; Conductors; Diode lasers; Frequency measurement; Optical mixing; Physics; Radiation detectors; Schottky diodes; Semiconductor diodes; Surface acoustic waves; Tungsten;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 2004. IMTC 04. Proceedings of the 21st IEEE
Print_ISBN :
0-7803-8248-X
DOI :
10.1109/IMTC.2004.1351561
