Title :
Fully balanced low-noise transconductance amplifiers with P1dB > 0dBm in 45nm CMOS
Author :
Geddada, Hemasundar M. ; Silva-Martinez, Jose ; Taylor, Stewart S.
Author_Institution :
Analog & Mixed-Signal Center, Texas A&M Univ., College Station, TX, USA
Abstract :
This paper presents two linear broadband inductorless Low Noise Transconductance Amplifiers (LNTA) featuring high linearities for large signal (P1dB) and small signal (IIP3). The LNTAs utilize the complementary characteristics of NMOS and PMOS transistors to enhance the linearity. First prototype is a fully balanced current reuse LNTA achieving 0.12GHz bandwidth, minimum NF of 3dB, IIP3 of 10.8dBm and P1dB of 0dBm while dissipating 35mW. Second prototype proposes a low power bulk driven LNTA with 20mW of power consumption achieving comparable performances. Each LNTA occupy 0.06mm2 in 45nm CMOS.
Keywords :
CMOS analogue integrated circuits; MOSFET; low noise amplifiers; operational amplifiers; wideband amplifiers; CMOS technology; IIP3; LNTA; NMOS transistor; PMOS transistor; bandwidth 0.1 GHz to 2 GHz; fully balanced current reuse LNTA; fully balanced current reuse low-noise transconductance amplifier; large signal linearity; linear broadband inductorless low noise transconductance amplifier; noise figure 3 dB; power 20 mW; power 35 mW; size 45 nm; small signal linearity; Impedance; Impedance matching; Linearity; Mixers; Noise; Noise measurement; Transistors;
Conference_Titel :
ESSCIRC (ESSCIRC), 2011 Proceedings of the
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0703-2
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2011.6044949