A new theory for CMP with soft pads

Author

Shi, Frank G. ; Zhao, Bin ; Wang, Shi-Qing

Author_Institution

California Univ., Irvine, CA, USA

fYear

1998

fDate

1-3 Jun 1998

Firstpage

73

Lastpage

75

Abstract

A new theory for chemical-mechanical polishing with soft pads is developed. In contrast to the conventional Preston´s equation, the pressure dependence of the removal rate for CMP with soft pads is found to be nonlinear, i.e. RR∝P^2/3. The combined effect of both pressure and the elastic modulus of the wafer (H_w) and the pad (H_a) on the CMP removal rate can be characterized by a dimensionless parameter, E_a^1/3P^2/3/E _w. The new results are shown to be consistent with available experimental evidence on dielectric films. This theory thus may provide an important basis for understanding CMP mechanisms, as well as for optimization of experimental parameters for actual process design

Keywords

chemical mechanical polishing; design engineering; dielectric thin films; elastic moduli; integrated circuit interconnections; integrated circuit metallisation; optimisation; semiconductor process modelling; CMP; CMP mechanisms; CMP removal rate; Preston´s equation; chemical-mechanical polishing; dielectric films; experimental parameter optimization; nonlinear CMP removal rate pressure dependence; pad elastic modulus; process design; soft CMP pads; wafer elastic modulus; Abrasives; Atom optics; Chemical engineering; Design optimization; Dielectric films; Manufacturing; Microelectronics; Nonlinear equations; Planarization; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704755

Filename

704755