Title :
A 200GHz downconverter in 90nm CMOS
Author :
Tytgat, Maarten ; Steyaert, Michiel ; Reynaert, Patrick
Author_Institution :
ESAT-MICAS, K.U. Leuven, Leuven, Belgium
Abstract :
A 200 GHz downconverter in 90 nm standard CMOS is presented with a measured positive conversion gain of +6.6 dB and an IF bandwidth of 3 GHz for an LO power of -14.9 dBm. The conversion gain has a flatness of ±1.5 dB in an LO frequency range of 26 GHz. The IIP3 is -5.4 dBm. BPSK and QPSK data downconversion are demonstrated with a data rate of over 4 Gbit/s.
Keywords :
CMOS integrated circuits; convertors; data conversion; field effect MIMIC; quadrature phase shift keying; BPSK data downconversion; IF bandwidth; LO frequency range; LO power; QPSK data downconversion; bandwidth 3 GHz; downconverter; frequency 200 GHz; positive conversion gain; size 90 nm; standard CMOS; Bandwidth; CMOS integrated circuits; Frequency modulation; Gain; Noise; Radio frequency; Transistors;
Conference_Titel :
ESSCIRC (ESSCIRC), 2011 Proceedings of the
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0703-2
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2011.6044951
