Title :
A 13/24/35-GHz concurrent tri-band LNA with feedback notches
Author :
Jaeyoung Lee ; Cam Nguyen
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
A new concurrent tri-band LNA (TBLNA) operating around 13/24/35 GHz has been designed using a novel tri-band load for stable and high stop-band rejection. The tri-band load is composed of two passive LC notch filters with feedback. The TBLNA fabricated on a 0.18-μm SiGe BiCMOS process achieves power gain of 22.3/24.6/22.2 dB at 13.5/24.5/34.5 GHz, respectively. It has the best noise figure of 3.7/3.3/4.3 dB and the IIP3 of -17.5/-18.5/-15.6 dBm, at each pass-band, respectively. The TBLNA consumes 36 mW from a 1.8 V supply, and occupies 920 μm × 500 μm.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; feedback amplifiers; low noise amplifiers; microwave amplifiers; microwave integrated circuits; notch filters; passive filters; BiCMOS process; SiGe; TBLNA; concurrent triband LNA; feedback notches; frequency 13 GHz; frequency 13.5 GHz; frequency 24 GHz; frequency 24.5 GHz; frequency 34.5 GHz; frequency 35 GHz; gain 22.2 dB; gain 22.3 dB; gain 24.6 dB; high stopband rejection; noise figure 3.3 dB; noise figure 3.7 dB; noise figure 4.3 dB; passive LC notch filters; power 36 mW; size 0.18 mum; triband load; voltage 1.8 V; Dual band; Frequency measurement; Gain; Inductors; Noise measurement; Receivers; Semiconductor device measurement; Dual-band; LNA; RFIC; multiband; wideband;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
DOI :
10.1109/SiRF.2013.6489496
