DocumentCode :
1809472
Title :
Key components of a 130 GHz dicke-radiometer SiGe RFIC
Author :
Shumakher, E. ; Elkind, J. ; Elad, Danny
Author_Institution :
IBM Haifa Res. Labs., Haifa Univ. Campus, Haifa, Israel
fYear :
2013
fDate :
21-23 Jan. 2013
Firstpage :
255
Lastpage :
257
Abstract :
This paper presents the design and characterization results of the key components of calibrated passive radiometer (Dicke-radiometer) operating in the low D-band (around 130 GHz) and realized in IBM´s standard 0.12-um SiGe BiCMOS technology (IBM8HP, fT /fMAX =180/220 GHz). Several perspective candidates for the Dicke-switch, the low-noise amplifier and the square-law detector have been designed and characterized, obtaining fair agreement between the measured and the simulated performance.
Keywords :
Ge-Si alloys; radiofrequency integrated circuits; radiometers; BiCMOS technology; D-band; Dicke-switch; IBM standard; IBM8HP; RFIC; SiGe; calibrated passive radiometer; dicke-radiometer; frequency 130 GHz; low-noise amplifier; size 0.12 mum; square-law detector; Bandwidth; Detectors; Frequency measurement; Low-noise amplifiers; Microwave radiometry; Radiofrequency integrated circuits; Silicon germanium; Low-noise amplifier; Microwave imaging; Microwave radiometry; Millimeter wave integrated circuits; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
Type :
conf
DOI :
10.1109/SiRF.2013.6489497
Filename :
6489497
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1809472
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