Key components of a 130 GHz dicke-radiometer SiGe RFIC

Author

Shumakher, E. ; Elkind, J. ; Elad, Danny

Author_Institution

IBM Haifa Res. Labs., Haifa Univ. Campus, Haifa, Israel

fYear

2013

fDate

21-23 Jan. 2013

Firstpage

255

Lastpage

257

Abstract

This paper presents the design and characterization results of the key components of calibrated passive radiometer (Dicke-radiometer) operating in the low D-band (around 130 GHz) and realized in IBM´s standard 0.12-um SiGe BiCMOS technology (IBM8HP, f_T /f_MAX =180/220 GHz). Several perspective candidates for the Dicke-switch, the low-noise amplifier and the square-law detector have been designed and characterized, obtaining fair agreement between the measured and the simulated performance.

Keywords

Ge-Si alloys; radiofrequency integrated circuits; radiometers; BiCMOS technology; D-band; Dicke-switch; IBM standard; IBM8HP; RFIC; SiGe; calibrated passive radiometer; dicke-radiometer; frequency 130 GHz; low-noise amplifier; size 0.12 mum; square-law detector; Bandwidth; Detectors; Frequency measurement; Low-noise amplifiers; Microwave radiometry; Radiofrequency integrated circuits; Silicon germanium; Low-noise amplifier; Microwave imaging; Microwave radiometry; Millimeter wave integrated circuits; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on

Conference_Location

Austin, TX

Print_ISBN

978-1-4673-1552-4

Electronic_ISBN

978-1-4673-1551-7

Type

conf

DOI

10.1109/SiRF.2013.6489497

Filename

6489497