Title :
A 11.4dBm 90nm CMOS H-Bridge resonating polar amplifier using RF Sigma Delta Modulation
Author :
Rong, Liang ; Jonsson, Fredrik ; Zheng, Li-Rong
Author_Institution :
iPack Center, R. Inst. of Technol. (KTH), Stockholm, Sweden
Abstract :
Using RF Sigma Delta Modulation (RFSDM), a class-D polar amplifier in H-Bridge configuration can work in resonating mode and minimize the switching loss for high efficiency polar transmitters. The high oversampling ratio envelop bit stream created by the low pass RFSDM is phase modulated and digitally mixed with quantized RF carrier to give a modulated RF digital signal. By taking the advantage of high speed and accurate digital CMOS process, this `information combination´ architecture can achieve high efficiency and reduce the need for external filter components. A polar power amplifier based on this concept is implemented in 90 nm CMOS process and achieved a peak output power of 11.4 dBm with 19.3% efficiency at 1.0V power supply. The total area is 0.72 mm2 including an on-chip filter matching network designed for 2.4 GHz to 2.7 GHz band.
Keywords :
CMOS digital integrated circuits; power amplifiers; sigma-delta modulation; CMOS H-bridge resonating polar amplifier; RF sigma delta modulation; bandwidth 2.4 GHz to 2.7 GHz; class-D polar amplifier; digital CMOS process; high efficiency polar transmitter; information combination architecture; modulated RF digital signal; polar power amplifier; quantized RF carrier; size 90 nm; switching loss; Band pass filters; Delay; Matched filters; Modulation; Noise; Radio frequency; Transmitters; Digital Delay Trimming; H-Bridge Digital Polar Amplifier; Low Pass RF Sigma Delta Modulation; on-Chip Filter Matching Network;
Conference_Titel :
ESSCIRC (ESSCIRC), 2011 Proceedings of the
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0703-2
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2011.6044968