The features of conical refraction phenomenon in the semiconductor-dielectric subwavelength periodic structure

Conical refraction phenomenon in a fine-stratified structure was studied. The structure was fabricated by periodic alternating dielectric and semiconductor layers and was exposed into an external magnetic field parallel to the boundaries of the layers and perpendicular to the plane of incidence. The expressions for effective permittivity were obtained. It has been shown that such structure represents a biaxial crystal. The dependences of aperture angles of an external and internal conical refraction cone as function of frequency, external magnetic field and thickness of layers were analysed.