• DocumentCode
    1810331
  • Title

    A 350nA voltage regulator for 90nm CMOS digital circuits with Reverse-Body-Bias

  • Author

    Piqué, Gerard Villar ; Meijer, Maurice

  • Author_Institution
    NXP Semicond., Eindhoven, Netherlands
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    379
  • Lastpage
    382
  • Abstract
    An ultra-low power CMOS 90nm Reverse-Body-Bias generator is proposed to reduce digital circuit leakage. A Switched-Capacitor-Converter (SCC) and a Low-Drop-Out regulator generate Pwell and Nwell voltages, respectively. It can supply digital circuits up to 4mm2 while occupying 0.02mm2. Its nominal current consumption is 348nA. Pulse-train control provides wide output current range, and process and temperature compensation without sacrifying efficiency. The SCC achieves a best-in-class efficiency of 52% at 100nA load including the control loop.
  • Keywords
    CMOS digital integrated circuits; low-power electronics; switched capacitor networks; voltage regulators; CMOS digital circuits; current 100 nA; current 348 nA; current 350 nA; efficiency 52 percent; low-drop-out regulator; pulse-train control; size 90 nm; switched-capacitor-converter; ultralow power CMOS reverse-body-bias generator; voltage regulator; CMOS integrated circuits; Clocks; Digital circuits; Generators; Power demand; Switches; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ESSCIRC (ESSCIRC), 2011 Proceedings of the
  • Conference_Location
    Helsinki
  • ISSN
    1930-8833
  • Print_ISBN
    978-1-4577-0703-2
  • Electronic_ISBN
    1930-8833
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2011.6044986
  • Filename
    6044986