DocumentCode
1810331
Title
A 350nA voltage regulator for 90nm CMOS digital circuits with Reverse-Body-Bias
Author
Piqué, Gerard Villar ; Meijer, Maurice
Author_Institution
NXP Semicond., Eindhoven, Netherlands
fYear
2011
fDate
12-16 Sept. 2011
Firstpage
379
Lastpage
382
Abstract
An ultra-low power CMOS 90nm Reverse-Body-Bias generator is proposed to reduce digital circuit leakage. A Switched-Capacitor-Converter (SCC) and a Low-Drop-Out regulator generate Pwell and Nwell voltages, respectively. It can supply digital circuits up to 4mm2 while occupying 0.02mm2. Its nominal current consumption is 348nA. Pulse-train control provides wide output current range, and process and temperature compensation without sacrifying efficiency. The SCC achieves a best-in-class efficiency of 52% at 100nA load including the control loop.
Keywords
CMOS digital integrated circuits; low-power electronics; switched capacitor networks; voltage regulators; CMOS digital circuits; current 100 nA; current 348 nA; current 350 nA; efficiency 52 percent; low-drop-out regulator; pulse-train control; size 90 nm; switched-capacitor-converter; ultralow power CMOS reverse-body-bias generator; voltage regulator; CMOS integrated circuits; Clocks; Digital circuits; Generators; Power demand; Switches; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
ESSCIRC (ESSCIRC), 2011 Proceedings of the
Conference_Location
Helsinki
ISSN
1930-8833
Print_ISBN
978-1-4577-0703-2
Electronic_ISBN
1930-8833
Type
conf
DOI
10.1109/ESSCIRC.2011.6044986
Filename
6044986
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