Title :
A 350nA voltage regulator for 90nm CMOS digital circuits with Reverse-Body-Bias
Author :
Piqué, Gerard Villar ; Meijer, Maurice
Author_Institution :
NXP Semicond., Eindhoven, Netherlands
Abstract :
An ultra-low power CMOS 90nm Reverse-Body-Bias generator is proposed to reduce digital circuit leakage. A Switched-Capacitor-Converter (SCC) and a Low-Drop-Out regulator generate Pwell and Nwell voltages, respectively. It can supply digital circuits up to 4mm2 while occupying 0.02mm2. Its nominal current consumption is 348nA. Pulse-train control provides wide output current range, and process and temperature compensation without sacrifying efficiency. The SCC achieves a best-in-class efficiency of 52% at 100nA load including the control loop.
Keywords :
CMOS digital integrated circuits; low-power electronics; switched capacitor networks; voltage regulators; CMOS digital circuits; current 100 nA; current 348 nA; current 350 nA; efficiency 52 percent; low-drop-out regulator; pulse-train control; size 90 nm; switched-capacitor-converter; ultralow power CMOS reverse-body-bias generator; voltage regulator; CMOS integrated circuits; Clocks; Digital circuits; Generators; Power demand; Switches; Voltage control;
Conference_Titel :
ESSCIRC (ESSCIRC), 2011 Proceedings of the
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0703-2
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2011.6044986
