• DocumentCode
    1810655
  • Title

    TiO2 memristor devices

  • Author

    Yakopcic, Chris ; Sarangan, Andrew ; Gao, Jian ; Taha, Tarek M. ; Subramanyam, Guru ; Rogers, Stanley

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Dayton, Dayton, OH, USA
  • fYear
    2011
  • fDate
    20-22 July 2011
  • Firstpage
    101
  • Lastpage
    104
  • Abstract
    This paper presents the fabrication technique and results obtained for a titanium oxide based memristor design. A memristor wafer was developed that contains isolated devices as well as small memristor crossbar arrays (36 devices). The current-voltage relationship of the devices shows a memristive switching effect that is more apparent when the devices are negatively biased.
  • Keywords
    memristors; titanium compounds; TiO2; crossbar arrays; current-voltage relationship; fabrication technique; memristor devices; memristor wafer; Conductivity; Materials; Memristors; Resistance; Switches; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Aerospace and Electronics Conference (NAECON), Proceedings of the 2011 IEEE National
  • Conference_Location
    Dayton, OH
  • ISSN
    0547-3578
  • Print_ISBN
    978-1-4577-1040-7
  • Type

    conf

  • DOI
    10.1109/NAECON.2011.6183085
  • Filename
    6183085
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1810655