DocumentCode
1810684
Title
Carbon nanostructure growth in an inductively coupled plasma
Author
Collard, C. ; Brake, M.L. ; Song, S. ; Crimp, M. ; Ayres, V.M.
Author_Institution
Michigan Univ., Dearborn, MI, USA
fYear
2001
fDate
17-22 June 2001
Firstpage
552
Abstract
Summary form only given, as follows. Carbon nanostructures have been grown in a modified GEC Reference Cell. The inductively coupled plasma is generated with 500 watts of 13.56 RF power applied to a five turn coil. A second 500 watt RF power supply is used to bias the substrate. The carbon nanostructures were grown on silicon substrates covered with 100E-200 E Fe thin films, which serve as a catalyst. Argon at 100 mT is used as a buffer gas to sustain the inductively coupled mode. Varying ratios of CH/sub 4/ and H/sub 2/ are added to the gas as needed by the growth mechanisms. Several morphologies were obtained. Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution TEM are used to examine the samples. Growth morphologies as a function of plasma and reactor parameters are discussed.
Keywords
Raman spectroscopy; carbon; nanostructured materials; nanotechnology; plasma applications; plasma chemistry; scanning electron microscopy; transmission electron microscopy; 100 mtorr; 500 W; Ar; C; C nanostructure growth; C nanostructures; Fe; Fe thin films; H/sub 2/; RF power; RF power supply; Raman spectroscopy; Si; Si substrates; bias; buffer gas; catalyst; five turn coil; growth mechanisms; high resolution transmission electron microscopy; inductively coupled mode; inductively coupled plasma; methane; modified GEC Reference Cell; scanning electron microscopy; substrate; transmission electron microscopy; Coils; Iron; Morphology; Plasmas; Power generation; Power supplies; Radio frequency; Scanning electron microscopy; Silicon; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Plasma Science, 2001. IEEE Conference Record - Abstracts
Conference_Location
Las Vegas, NV, USA
Print_ISBN
0-7803-7141-0
Type
conf
DOI
10.1109/PPPS.2001.961378
Filename
961378
Link To Document