Title :
Design of a D-Band frequency doubler using GaAs Schottky barrier diodes
Author :
Yao, Changfei ; Xu, Jinping ; Ying, Kang
Author_Institution :
State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing
Abstract :
A circuit schematic of a D-band frequency doubler using commercially available DBES105a GaAs Schottky barrier diodes is proposed in this paper. Simulation study and circuit design of the doubler are carried out by using CST and ADS. The planar Schottky diodes are soldered on a 0.127 mm-thick Rogers Duroid 5880 substrate. The circuit substrate is about 20 mm long, 0.8 mm wide and mounted in the waveguide block that includes matching networks for local oscillator and RF frequency. The simulated multiplication efficiency reaches 12.6% at 132.8 GHz and 11.67% at 137.4 GHz respectively.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; frequency convertors; gallium arsenide; integrated circuit design; substrates; waveguides; D-band frequency doubler design; DBES105a GaAs Schottky barrier diodes; RF frequency; Rogers Duroid 5880 substrate; circuit substrate; frequency 132.8 GHz; frequency 137.4 GHz; local oscillator; matching networks; planar Schottky diodes; waveguide block; Circuit simulation; Frequency; Gallium arsenide; Millimeter wave devices; Millimeter wave technology; Oscillators; Power generation; Schottky barriers; Schottky diodes; Submillimeter wave technology;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1879-4
Electronic_ISBN :
978-1-4244-1880-0
DOI :
10.1109/ICMMT.2008.4540642
