Design of a D-Band frequency doubler using GaAs Schottky barrier diodes

Author

Yao, Changfei ; Xu, Jinping ; Ying, Kang

Author_Institution

State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing

Volume

3

fYear

2008

fDate

21-24 April 2008

Firstpage

1193

Lastpage

1195

Abstract

A circuit schematic of a D-band frequency doubler using commercially available DBES105a GaAs Schottky barrier diodes is proposed in this paper. Simulation study and circuit design of the doubler are carried out by using CST and ADS. The planar Schottky diodes are soldered on a 0.127 mm-thick Rogers Duroid 5880 substrate. The circuit substrate is about 20 mm long, 0.8 mm wide and mounted in the waveguide block that includes matching networks for local oscillator and RF frequency. The simulated multiplication efficiency reaches 12.6% at 132.8 GHz and 11.67% at 137.4 GHz respectively.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; frequency convertors; gallium arsenide; integrated circuit design; substrates; waveguides; D-band frequency doubler design; DBES105a GaAs Schottky barrier diodes; RF frequency; Rogers Duroid 5880 substrate; circuit substrate; frequency 132.8 GHz; frequency 137.4 GHz; local oscillator; matching networks; planar Schottky diodes; waveguide block; Circuit simulation; Frequency; Gallium arsenide; Millimeter wave devices; Millimeter wave technology; Oscillators; Power generation; Schottky barriers; Schottky diodes; Submillimeter wave technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-1879-4

Electronic_ISBN

978-1-4244-1880-0

Type

conf

DOI

10.1109/ICMMT.2008.4540642

Filename

4540642