DocumentCode
1810816
Title
Photonic quasi-periodic multilayered structure for the near-infrared region
Author
Fesenko, V.I. ; Sukhoivanov, I.A.
Author_Institution
Lab. “Photonics”, Kharkov Nat. Univ. of Radio Electron., Kharkov, Ukraine
fYear
2012
fDate
28-30 Aug. 2012
Firstpage
537
Lastpage
540
Abstract
This paper presents the results of a study of silicon multilayered structures in the near-infrared region (wavelength range 0.8-1.7 μm). The quasi-periodic layered systems are created when two different layers with alternative high (H) and low (L) refractive index are arranged according to the following relations: equation, {Hλ/41Lλ/41Hx1Lx1}, ..., {Hλ/4NLλ/4NHxNLxN}, where x= mλ/4, (m-1,2 ...)- is the effective optical thickness of the arbitrary layer. The transfer matrix formalism is used to perform simulations of light propagation into investigated structures. Varying the thickness of second building block layers we have obtained the results that describe optical response of quasi-periodic structures dependently on selection of their parameters.
Keywords
elemental semiconductors; infrared spectra; light propagation; optical multilayers; photonic crystals; refractive index; silicon; Si; arbitrary layer; light propagation; near-infrared region; optical response; optical thickness; photonic quasiperiodic multilayered structure; refractive index; silicon multilayered structures; transfer matrix formalism; wavelength 0.8 mum to 1.7 mum; Mirrors; Nonhomogeneous media; Optical reflection; Optical refraction; Optical variables control; Photonics; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Mathematical Methods in Electromagnetic Theory (MMET), 2012 International Conference on
Conference_Location
Kyiv
ISSN
2161-1734
Print_ISBN
978-1-4673-4478-4
Type
conf
DOI
10.1109/MMET.2012.6331221
Filename
6331221
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