Title :
Comparison of PECVD-WNx and CVD-TiN films for the upper electrode of Ta2O5 capacitors
Author :
Park, Byung-Lyul ; Lee, Myoung-Bum ; Moon, Kwang-Jin ; Lee, Hyeon-Deok ; Kang, Ho-Kyu ; Lee, Moon-Yong
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin-City, South Korea
Abstract :
The electrical characteristics of PECVD-WNx and CVD-TiN films as the upper electrode for Ta2O5 capacitors were compared in a 3D stack structure. In terms of step coverage, CVD-TiN shows excellent results of about 90% at the stack structure corner, but PECVD-WNx only reaches about 50%. However, WNx electrodes at even 100 Å-thickness exhibit equivalent capacitance and leakage current when compared with 150 Å-thick CVD-TiN electrodes. It is demonstrated that both PECVD-WN x and CVD-TiN are good candidates for the upper electrodes of Ta2O5 capacitors for ULSI DRAMs
Keywords :
DRAM chips; ULSI; capacitance; chemical interdiffusion; chemical vapour deposition; diffusion barriers; electrodes; electrolytic capacitors; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; leakage currents; plasma CVD; tantalum compounds; titanium compounds; tungsten compounds; 100 angstrom; 150 angstrom; 3D stack structure; CVD-TiN electrode thickness; CVD-TiN film upper electrode; CVD-TiN films; PECVD-WNx film upper electrode; PECVD-WNx films; Ta2O5 capacitor upper electrode; Ta2O5 capacitors; TiN-Ta2O5; ULSI DRAMs; WN-Ta2O5; WNx electrode thickness; barrier materials; capacitance; electrical characteristics; leakage current; stack structure corner; step coverage; Annealing; Capacitance; Capacitors; Electric variables; Electrodes; Leakage current; Plasma temperature; Semiconductor films; Tin; Ultra large scale integration;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704761
