DocumentCode
1811023
Title
Temperature drift analysis in silicon micromachined piezoresistive accelerometer
Author
Sankar, A. Ravi ; Saini, V. ; Das, S. ; Kal, S.
Author_Institution
Adv. Technol. Centre, Indian Inst. of Technol., Kharagpur, India
fYear
2004
fDate
20-22 Dec. 2004
Firstpage
561
Lastpage
563
Abstract
Unlike in capacitive accelerometers, where the output voltage is less sensitive to temperature effects, but in piezoresistive accelerometers the output voltage varies considerably with respect to temperature. This paper presents temperature drift analysis of silicon micromachined piezoresistive accelerometer. The input range of the accelerometer is ±13 g and this device finds application in aircraft motion sensing. The temperature drift analysis of the device is simulated using MemPZR module of CoventorWare 2003.1 and the simulation results are presented.
Keywords
accelerometers; aircraft navigation; electric sensing devices; micromachining; piezoresistive devices; silicon; CoventorWare 2003.1; MemPZR module; aircraft motion sensing; silicon micromachined piezoresistive accelerometer; temperature drift analysis; Acceleration; Accelerometers; Analytical models; Bridge circuits; Conductivity; Piezoresistance; Resistors; Silicon; Temperature sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
India Annual Conference, 2004. Proceedings of the IEEE INDICON 2004. First
Print_ISBN
0-7803-8909-3
Type
conf
DOI
10.1109/INDICO.2004.1497822
Filename
1497822
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