Title :
Properties of high velocity ZnO thin films for saw devices grown by radio frequency magnetron sputtering
Author :
Bian, Xu-ming ; Chen, Rui ; Fan, Bai-jie ; Li, Li ; He, Chun-he ; Fan, Zi-kun
Author_Institution :
Beijing Chang Feng SAW Co., Beijing, China
Abstract :
In this paper, ZnO thin films were deposited on SiO2/Si (100) substrates by radio frequency magnetron sputtering using high purity (99.999%) ZnO target, grown time was 2 h, 4 h and 8 h respectively. After annealing in pure oxygen atmosphere, high-quality ZnO thin film was obtained. X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) were employed to characterize the quality of the films. Based on the ZnO films, SAW filters were fabricated by lift-off technique. When the thickness of ZnO film was 0.63 ¿m and IDT ¿ was 6 ¿m, the SAW velocity was 5814 m/s.
Keywords :
II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; annealing; semiconductor growth; semiconductor thin films; silicon; silicon compounds; sputter deposition; surface acoustic wave filters; zinc compounds; (100) substrates; SAW devices; SAW filters; Si; SiO2; X-ray diffraction; XRD; ZnO; annealing; energy dispersive spectroscopy; lift-off technique; radio frequency magnetron sputtering; size 0.63 mum; size 6 mum; thin films; time 2 h; time 4 h; time 8 h; Annealing; Magnetic devices; Magnetic properties; Radio frequency; Semiconductor thin films; Sputtering; Substrates; Surface acoustic wave devices; Thin film devices; Zinc oxide; RF magnetron sputtering; SAW filter; ZnO thin film; c-axis orientation;
Conference_Titel :
Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA) and 2009 China Symposium on Frequency Control Technology, Joint Conference of the 2009 Symposium on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-4950-7
DOI :
10.1109/SPAWDA.2009.5428948
