Properties of high velocity ZnO thin films for saw devices grown by radio frequency magnetron sputtering

Author

Bian, Xu-ming ; Chen, Rui ; Fan, Bai-jie ; Li, Li ; He, Chun-he ; Fan, Zi-kun

Author_Institution

Beijing Chang Feng SAW Co., Beijing, China

fYear

2009

fDate

17-20 Dec. 2009

Firstpage

54

Lastpage

54

Abstract

In this paper, ZnO thin films were deposited on SiO₂/Si (100) substrates by radio frequency magnetron sputtering using high purity (99.999%) ZnO target, grown time was 2 h, 4 h and 8 h respectively. After annealing in pure oxygen atmosphere, high-quality ZnO thin film was obtained. X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) were employed to characterize the quality of the films. Based on the ZnO films, SAW filters were fabricated by lift-off technique. When the thickness of ZnO film was 0.63 Â¿m and IDT Â¿ was 6 Â¿m, the SAW velocity was 5814 m/s.

Keywords

II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; annealing; semiconductor growth; semiconductor thin films; silicon; silicon compounds; sputter deposition; surface acoustic wave filters; zinc compounds; (100) substrates; SAW devices; SAW filters; Si; SiO₂; X-ray diffraction; XRD; ZnO; annealing; energy dispersive spectroscopy; lift-off technique; radio frequency magnetron sputtering; size 0.63 mum; size 6 mum; thin films; time 2 h; time 4 h; time 8 h; Annealing; Magnetic devices; Magnetic properties; Radio frequency; Semiconductor thin films; Sputtering; Substrates; Surface acoustic wave devices; Thin film devices; Zinc oxide; RF magnetron sputtering; SAW filter; ZnO thin film; c-axis orientation;

fLanguage

English

Publisher

ieee

Conference_Titel

Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA) and 2009 China Symposium on Frequency Control Technology, Joint Conference of the 2009 Symposium on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-4950-7

Type

conf

DOI

10.1109/SPAWDA.2009.5428948

Filename

5428948