Title :
Performance and manufacturability of the Co/Ti (cap) silicidation process for 0.25 μm MOS-technologies
Author :
Lauwers, Anne ; Besser, Paul ; De Potter, Muriel ; Kondoh, Eiichi ; Roelandts, Nico ; Steegen, An ; Stucchi, Michele ; Maex, Karen
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Recently, CoSi2 has been introduced in MOS manufacturing. Several CoSi2 formation processes have been proposed. The single layer of Co on Si has been replaced by other processes because of its poor manufacturability. Major problems include its sensitivity to cleaning and irreproducible yield on narrow lines, partly attributed to a silicide thinning effect at the edges of the silicide lines. The Ti/Co (Ti at interface) process has been introduced to alleviate the requirements for cleaning and has been proposed for its epitaxial CoSi2 growth. The Co/TiN process has been reported to have a large process window with respect to the control of lateral growth. The Co/Ti (Ti cap) process has been shown to be a very promising process and its scalability towards 0.1 μm and below has been demonstrated. In this paper, the role of the Ti cap in CoSi2 formation is presented and the performance and manufacturability of the process for ⩽0.25 μm processes are discussed
Keywords :
MOS integrated circuits; cobalt; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; interface structure; surface cleaning; titanium; 0.25 micron; Co single layer on Si formation process; Co-Si; Co-Ti cap process; Co-Ti cap silicidation process; Co-Ti-Si; Co-TiN; Co/TiN process; CoSi2 MOS manufacturing; CoSi2 formation; CoSi2 formation processes; CoSi2-Ti-Si; MOS technology; Si; Ti cap role; Ti interface layer; cleaning; cleaning sensitivity; epitaxial CoSi2 growth; irreproducible yield; lateral growth control; manufacturability; narrow lines; process performance; process scalability; process window; silicide line edges; silicide thinning effect; Chemicals; Conductivity; Etching; Manufacturing processes; Silicidation; Silicides; Temperature; Thermal stresses; Time measurement; Tin;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704762
