مرکز منطقه ای اطلاع رساني علوم و فناوري - InAs quantum dot structures on InP grown by MOVPE for mid-infrared emission

DocumentCode :

1811190

Title :

InAs quantum dot structures on InP grown by MOVPE for mid-infrared emission

Author :

Xiaohong, Tang ; Zongyou, Yin ; Jinghua, Teng ; Anyan, Du

Author_Institution :

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear :

2008

fDate :

25-29 May 2008

Firstpage :

Lastpage :

Abstract :

High density, uniform InAs quantum dots (QDs) have been grown on In_xGa_1-xAs/InP matrix by metal-organic vapor phase epitaxy (MOVPE) using a two-step growth method. By sandwiching the InAs QDs between In_xGa_1-xAs barrier layers, emission wavelength of the InAs/In_xGa_1-xAs/InP QD structures reaches >2.3 mum.

Keywords :

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; InAs-In_xGa_1-xAs-InP; MOVPE; barrier layers; metal-organic vapor phase epitaxy; mid-infrared emission; quantum dot structures; two-step growth; Epitaxial growth; Epitaxial layers; Indium phosphide; Power lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Solid lasers; Substrates; InAs; MOVPE; mid-infrared; quantum dot;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location :

Versailles

ISSN :

1092-8669

Print_ISBN :

978-1-4244-2258-6

Electronic_ISBN :

1092-8669

Type :

conf

DOI :

10.1109/ICIPRM.2008.4702893

Filename :

4702893

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1811190