Title :
GaN-On-Si Reliability: A Comparative Study Between Process Platforms
Author :
Singhal, S. ; Chaudhari, A. ; Hanson, A.W. ; John, J.W. ; Therrien, R. ; Rajagopal, P. ; Li, T. ; Park, C. ; Edwards, A.P. ; Piner, E.L. ; Kizilyalli, I.C. ; Linthicum, K.J.
Author_Institution :
Nitronex Corp., Raleigh, NC
Abstract :
GaN-on-Si transistors are put through an extensive suite of reliability tests in order to accurately assess the drift characteristics of the technology. Data is presented on DC-HTOL, RF-HTOL, and 3-temperature DC tests. In all cases results are compared with the previous generation of technology and reveal improved results. Highlights include an increase in the activation energy from 1.7eV to 2.0eV and a 50% reduction in the 20-year drift rate as predicted by DC-HTOL testing
Keywords :
III-V semiconductors; life testing; semiconductor device reliability; semiconductor device testing; semiconductor technology; transistors; wide band gap semiconductors; 1.7 to 2.0 eV; DC-HTOL; GaN-Si; GaN-on-Si transistor reliability; RF-HTOL; drift characteristics; high temperature operation; process platforms; reliability tests; three-temperature DC test; Annealing; Ceramics; Packaging; Performance evaluation; Qualifications; Radio frequency; Temperature; Testing; Thermal conductivity; Voltage;
Conference_Titel :
ROCS Workshop, 2006. [Reliability of Compound Semiconductors]
Conference_Location :
San Antonio, TX
Print_ISBN :
0-7908-0113-2
DOI :
10.1109/ROCS.2006.323391
