Growth of indium phosphide bulk crystals for radiation detectors

Bulk indium phosphide single crystals were grown by the liquid encapsulation Czochralski method using vertical Bridgman low pressure synthesis of poly-crystalline InP. The semi-insulating state necessary for radiation detection was created by the iron doping or iron-zinc and titanium-zinc co-doping. High temperature annealing of very pure or tantalum doped InP were also done. For characterization of InP crystals the Hall measurements and mass spectroscopy analysis were used. Crystal structure defects were studied by the etching and X-ray methods. Samples of X-ray detectors of this material were constructed and the efficiency of detection was measured.