Reliability Assessment of Extrinsic Defects in Sinx Metal-Insulator-Metal Capacitors

Author

van der Wel, P.J. ; de Beer, J.R. ; van Boxtel, R.J.M. ; Hsieh, Y.Y. ; Wang, Y.C.

Author_Institution

Innovation Centre RF, NXP Semicond., Nijmegen

fYear

2006

fDate

12-12 Nov. 2006

Firstpage

35

Lastpage

40

Abstract

Metal-insulator-metal (MIM) capacitors are deposited at low temperatures. The dielectrics used for MIM capacitors are amorphous and always contain a certain amount of extrinsic defects. In this paper, the reliability of extrinsic defects in SiN_x MIM capacitors as part of a GaAs high voltage (HV) FET process was assessed. It was shown in this paper that the number of extrinsic defects depends on the presence of oval defects in the epitaxial GaAs layers. The reliability assessment was done using electric field breakdown (Ebd), time dependent dielectric breakdown (TDDB) measurements and visual inspection. It was also shown that this combination can lead to an estimate of the lifetime and screening of capacitors containing extrinsic defects

Keywords

MIM devices; electric breakdown; epitaxial layers; field effect transistors; gallium arsenide; life testing; reliability; silicon compounds; thin film capacitors; GaAs; MIM capacitors; SiN; SiN_x; amorphous dielectrics; electric field breakdown; epitaxial layer defect; extrinsic defects; high voltage FET process; lifetime estimate; metal-insulator-metal capacitors; reliability assessment; time dependent dielectric breakdown; visual inspection; Amorphous materials; Dielectric breakdown; Electric breakdown; FETs; Gallium arsenide; MIM capacitors; Metal-insulator structures; Silicon compounds; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

ROCS Workshop, 2006. [Reliability of Compound Semiconductors]

Conference_Location

San Antonio, TX

Print_ISBN

0-7908-0113-2

Type

conf

DOI

10.1109/ROCS.2006.323402

Filename

4118080