Title :
Reliability Assessment of Extrinsic Defects in Sinx Metal-Insulator-Metal Capacitors
Author :
van der Wel, P.J. ; de Beer, J.R. ; van Boxtel, R.J.M. ; Hsieh, Y.Y. ; Wang, Y.C.
Author_Institution :
Innovation Centre RF, NXP Semicond., Nijmegen
Abstract :
Metal-insulator-metal (MIM) capacitors are deposited at low temperatures. The dielectrics used for MIM capacitors are amorphous and always contain a certain amount of extrinsic defects. In this paper, the reliability of extrinsic defects in SiNx MIM capacitors as part of a GaAs high voltage (HV) FET process was assessed. It was shown in this paper that the number of extrinsic defects depends on the presence of oval defects in the epitaxial GaAs layers. The reliability assessment was done using electric field breakdown (Ebd), time dependent dielectric breakdown (TDDB) measurements and visual inspection. It was also shown that this combination can lead to an estimate of the lifetime and screening of capacitors containing extrinsic defects
Keywords :
MIM devices; electric breakdown; epitaxial layers; field effect transistors; gallium arsenide; life testing; reliability; silicon compounds; thin film capacitors; GaAs; MIM capacitors; SiN; SiNx; amorphous dielectrics; electric field breakdown; epitaxial layer defect; extrinsic defects; high voltage FET process; lifetime estimate; metal-insulator-metal capacitors; reliability assessment; time dependent dielectric breakdown; visual inspection; Amorphous materials; Dielectric breakdown; Electric breakdown; FETs; Gallium arsenide; MIM capacitors; Metal-insulator structures; Silicon compounds; Temperature; Voltage;
Conference_Titel :
ROCS Workshop, 2006. [Reliability of Compound Semiconductors]
Conference_Location :
San Antonio, TX
Print_ISBN :
0-7908-0113-2
DOI :
10.1109/ROCS.2006.323402
