Fabrication of In0.52Al0.48As/In0.53Ga0.47As p-HEMT utilizing Ne-based atomic layer etching

Author

Tae-Woo Kim ; Seung Heon Shin ; Park, Sang Duk ; Yeom, Geun Young ; Jang, Jae-Hyung ; Song, Jong-In

Author_Institution

GIST, Center for Distrib. sensor network, Gwangju

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

The characteristics of 0.15 mum In_0.52Al_0.48As/In_0.53Ga_0.47As pseudomorphic high electron mobility transistors (p-HEMTs) fabricated using the Ne-based atomic layer etching (ALET) technology and the Ar-based conventional reactive ion etching (RIE) technology are reported. Compared to the p-HEMTs fabricated using the Ar-based RIE, the p-HEMTs fabricated using the ALET exhibited improved device performance including trasconductance (G_M = 1.38 S/mm), I_ON/I_OFF ratio (1.18 times 10⁴), and cutoff frequency (f_T = 233 GHz), mainly due to the extremely low plasma-induced damage of the ALET to the Schottky gate area.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; sputter etching; In_0.52Al_0.48As-In_0.53Ga_0.47As; Schottky gate area; atomic layer etching; cutoff frequency; electrical conductivity 1.38 S/mm; frequency 233 GHz; plasma-induced damage; pseudomorphic high electron mobility transistors; reactive ion etching; trasconductance; Atomic layer deposition; Fabrication; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Materials science and technology; Plasma applications; Surface morphology; Wet etching; Atomic layer etching (ALET); ION/IOFF ratio; peudomorphic high electron mobility transistor (p-HEMT);

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702898

Filename

4702898