Title :
Modifying the improved light-output intensity of AlGaInP-based LEDs by nanoporous alimina
Author :
Wang, Chien-Chun ; Liu, Chien-Chih ; Chong, Kwok-Keung ; Hung, Chen-I ; Yeong-Her Wang ; Houng, Mau-Phon
Author_Institution :
Inst. of Electro-Opt. Sci. & Eng., Nat. Cheng-Kung Univ., Tainan
Abstract :
This investigation describes the development of AlGaInP light-emitting diodes (LEDs) with a nanometer diameter of porous anodic alumina (PAA) films which are formed by anodization technique to improve and modify the light extraction efficiency. The pore-widening time was changed for surface modulation to obtain the optimum light extraction efficiency. The diameter of nano-pores varies from 30 nm to 60 nm and the interpore spacing is about 75 nm. The light output intensity of the PAA LEDs with 40 minutes pore-widening is 1.39 times that of conventional LEDs. PAA films can effectively reduce critical angle loss, Fresnel loss and be used as scattering center to improve the light extraction.
Keywords :
III-V semiconductors; aluminium compounds; anodisation; gallium compounds; indium compounds; light emitting diodes; AlGaInP; LED; anodization; critical angle loss; interpore spacing; light extraction efficiency; light-emitting diodes; pore-widening time; porous anodic alumina films; scattering center; size 30 nm to 60 nm; surface modulation; time 40 min; Aluminum oxide; Cities and towns; Light emitting diodes; Nanoporous materials; Optical films; Optical modulation; Optical reflection; Refractive index; Space technology; Surface morphology; light-emitting diodes; nanoporous alumina;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702899