Liquid phase oxidation on InAlAs and application to gate insulator of InAlAs/InGaAs HEMT lattice-matched to InP substrate

Author

Lee, Kuan-Wei ; Lin, Hsien-Chang ; Hsieh, Ja-Hong ; Cheng, Yu-Chun ; Wang, Yeong-Her

Author_Institution

Dept. of Electron. Eng., I-Shou Univ., Kaohsiung

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

The selective oxidation on InAlAs by liquid phase oxidation using photoresist or metal as a mask is proposed. Further application to gate insulator of InAlAs/InGaAs HEMT lattice-matched to InP substrate is also conducted. The high mobility electrons are constrained in 2DEG instead of traditional oxide-semiconductor interface. Also, this oxidation provides new opportunities to explore many alternative dielectrics for use as gate oxides and as passivation layers on III-V compound semiconductor devices.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; liquid phase deposition; masks; oxidation; passivation; photoresists; two-dimensional electron gas; 2DEG; HEMT; III-V compound; InAlAs-InGaAs; InP; gate insulator; high mobility electrons; liquid phase oxidation; mask; passivation layers; photoresist; semiconductor devices; traditional oxide-semiconductor interface; Dielectric liquids; Dielectric substrates; Dielectrics and electrical insulation; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Oxidation; Resists; HEMT; InAlAs; InP substrate; gate insulator; liquid phase oxidation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702901

Filename

4702901