Low temperature processing of conformal TiN by ACVD (advanced chemical vapor deposition) for multilevel metallization in high density ULSI devices

Author

Kang, Sang Bom ; Chae, Yun Sook ; Yoon, Mee Young ; Leem, Hyeun Seog ; Park, Chang Soo ; Lee, Sang In ; Lee, Moon Yong

Author_Institution

Semicond. R&D Center, Samsung Electron., Yongin-City, South Korea

fYear

1998

fDate

1-3 Jun 1998

Firstpage

102

Lastpage

104

Abstract

A novel method for low temperature deposition of conformal TiN is reported. ACVD (advanced chemical vapor deposition) is a TiCl₄-based TiN deposition process which relies on the surface reactions of the adsorbed precursors. With this technique, conformal TiN films with resistivity as low as 130 μΩ-cm can be deposited at a deposition temperature of 500°C and below. The results from the integration of ACVD-TiN with Si contacts and vias in high density devices indicate that ACVD-TiN is applicable to all levels of multilevel metallization for the next generation of ULSI devices

Keywords

ULSI; chemical interdiffusion; chemical vapour deposition; conformal coatings; diffusion barriers; electrical resistivity; integrated circuit interconnections; integrated circuit layout; integrated circuit metallisation; surface chemistry; titanium compounds; 130 muohmcm; 500 C; ACVD; ACVD-TiN integration; Si contacts; TiCl₄; TiCl₄-based TiN deposition process; TiN; ULSI devices; adsorbed precursors; advanced chemical vapor deposition; conformal TiN; conformal TiN films; deposition temperature; high density ULSI devices; low temperature deposition; low temperature processing; multilevel metallization; resistivity; surface reactions; vias; Artificial intelligence; Chemical vapor deposition; Conductivity; Electrodes; Metallization; Moon; Sputtering; Temperature; Tin; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704763

Filename

704763