340nm blue-shift in InGaAs/InAlAs quantum dots processed by SiO2 sputtering and rapid thermal annealing

Author

Hsu, T.C. ; Tzeng, T.E. ; Lin, E.Y. ; Chuang, K.Y. ; Chiu, C.L. ; Lay, T.S.

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

The atomic intermixing effects on emission wavelength blue-shift for self-assembled InGaAs/InAlAs quantum dots on InP substrate were investigated. A large blue-shift upto 343 nm, from lambda=1632 nm to 1289 nm, was obtained by SiO₂ sputtering deposition and rapid thermal annealing at 800degC.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; rapid thermal annealing; self-assembly; semiconductor growth; semiconductor quantum dots; spectral line shift; sputter deposition; InGaAs-InAlAs; atomic intermixing; blue shift; rapid thermal annealing; self-assembled quantum dots; sputtering deposition; temperature 800 degC; Annealing; Atomic layer deposition; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Plasma temperature; Quantum dots; Sputtering; Substrates; InP; intermixing; quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702906

Filename

4702906