Coplanar waveguide varactors with bottom metal trenched in silicon

Author

Brown, Dustin ; Zhang, Chenhao ; Patterson, Mark ; Subramanyam, Guru ; Leedy, Kevin ; Cerny, Charles

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Dayton, Dayton, OH, USA

fYear

2011

fDate

20-22 July 2011

Firstpage

309

Lastpage

311

Abstract

This paper reports the effects of embedding the bottom metal of a thin-film ferroelectric varactor into the wafer substrate. By embedding the bottom metal to a height flush with the surrounding dielectric, a smooth surface remains for the ferroelectric and top metal layers. This parallel stack of layers reduces the coupling between the two metal layers and the resulting capacitance. The design of the device and measured data of etched and non-etched varactors is also presented.

Keywords

capacitance; coplanar waveguides; ferroelectric thin films; silicon; thin film circuits; varactors; Si; bottom metal trenched; capacitance; coplanar waveguide varactor; coupling; device design; dielectric; ferroelectric metal layer; nonetched varactor; parallel layer stack; thin film circuit; thin-film ferroelectric varactor; top metal layer; wafer substrate; Capacitance; Coplanar waveguides; Metals; Silicon; Substrates; Varactors; Electromagnetic modeling; ferroelectric films; thin film circuits; varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace and Electronics Conference (NAECON), Proceedings of the 2011 IEEE National

Conference_Location

Dayton, OH

ISSN

0547-3578

Print_ISBN

978-1-4577-1040-7

Type

conf

DOI

10.1109/NAECON.2011.6183121

Filename

6183121