Title :
35 nm metamorphic HEMT MMIC technology
Author :
Leuther, A. ; Tessmann, A. ; Massler, Hermann ; Lösch, R. ; Schlechtweg, M. ; Mikulla, M. ; Ambacher, O.
Author_Institution :
Fraunhofer Inst. for Appl. Solid-State Phys. IAF, Freiburg
Abstract :
A metamorphic high electron mobility transistor (mHEMT) technology featuring 35 nm gate length has been developed. The optimized MBE grown layer sequence has a channel mobility and a channel electron density as high as 9800 cm2/Vs and 6.1times1012 cm-2, respectively. To enable a maximum extrinsic transconductance gm, max of 2500 mS/mm the source resistance has been reduced to 0.1 Omegamiddotmm. An ft of 515 GHz was achieved for a 2 times 10 mum device. Based on this advanced 35 nm mHEMT technology very compact single-stage H-band amplifiers circuits have been realized demonstrating a high small-signal gain of more than 7 dB at 270 GHz.
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; electron density; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; InGaAs-InAlAs; MBE grown layer sequence; channel electron density; channel mobility; extrinsic transconductance; frequency 270 GHz; frequency 515 GHz; gate length; metamorphic high electron mobility transistor technology; single-stage H-band amplifiers circuits; size 35 nm; submillimeter-wave monolithic integrated circuit; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Integrated circuit technology; MMICs; MODFETs; Submillimeter wave integrated circuits; Submillimeter wave technology; mHEMTs; InGaAs/InAlAs heterostructure; metamorphic high electron mobility transistor (mHEMT); submillimeter-wave monolithic integrated circuit (S-MMIC);
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702910
