35 nm metamorphic HEMT MMIC technology

Author

Leuther, A. ; Tessmann, A. ; Massler, Hermann ; Lösch, R. ; Schlechtweg, M. ; Mikulla, M. ; Ambacher, O.

Author_Institution

Fraunhofer Inst. for Appl. Solid-State Phys. IAF, Freiburg

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

A metamorphic high electron mobility transistor (mHEMT) technology featuring 35 nm gate length has been developed. The optimized MBE grown layer sequence has a channel mobility and a channel electron density as high as 9800 cm²/Vs and 6.1times1012 cm^-2, respectively. To enable a maximum extrinsic transconductance g_m, _max of 2500 mS/mm the source resistance has been reduced to 0.1 Omegamiddotmm. An f_t of 515 GHz was achieved for a 2 times 10 mum device. Based on this advanced 35 nm mHEMT technology very compact single-stage H-band amplifiers circuits have been realized demonstrating a high small-signal gain of more than 7 dB at 270 GHz.

Keywords

III-V semiconductors; MMIC amplifiers; aluminium compounds; electron density; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; InGaAs-InAlAs; MBE grown layer sequence; channel electron density; channel mobility; extrinsic transconductance; frequency 270 GHz; frequency 515 GHz; gate length; metamorphic high electron mobility transistor technology; single-stage H-band amplifiers circuits; size 35 nm; submillimeter-wave monolithic integrated circuit; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Integrated circuit technology; MMICs; MODFETs; Submillimeter wave integrated circuits; Submillimeter wave technology; mHEMTs; InGaAs/InAlAs heterostructure; metamorphic high electron mobility transistor (mHEMT); submillimeter-wave monolithic integrated circuit (S-MMIC);

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702910

Filename

4702910