• DocumentCode
    1811674
  • Title

    Microwave modeling and parameter extraction method for PHEMT

  • Author

    Gao, Jianjun ; Li, Xiuping

  • Author_Institution
    Sch. of Inf. Sci. & Technol., East China Normal Univ., Shanghai
  • Volume
    3
  • fYear
    2008
  • fDate
    21-24 April 2008
  • Firstpage
    1323
  • Lastpage
    1326
  • Abstract
    This paper reviews the characterization technique of pseudomorphic high electron mobility transistors (PHEMT). The linear, nonlinear and noise modeling and corresponding parameter extraction methods are described. The on wafer measurement methods for S parameters and noise parameters are also highlighted.
  • Keywords
    high electron mobility transistors; semiconductor device models; PHEMT; S parameters; microwave modeling; noise parameters; nonlinear noise modeling; parameter extraction; pseudomorphic high electron mobility transistors; wafer measurement; Electron mobility; HEMTs; MODFETs; Microwave theory and techniques; Microwave transistors; Noise measurement; PHEMTs; Parameter extraction; Scattering parameters; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-1-4244-1879-4
  • Electronic_ISBN
    978-1-4244-1880-0
  • Type

    conf

  • DOI
    10.1109/ICMMT.2008.4540682
  • Filename
    4540682
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1811674