Effects of arsenic mole fraction x on the gain characteristics of type-II INP/GAASxSB1-x DHBTS

Author

Zeng, Y.P. ; Ostinelli, O. ; Liu, H.G. ; Bolognesi, C.R.

Author_Institution

Lab. for Field Theor. & Microwave Electron., ETH Zurich, Zurich

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

The static gain characteristics of NpN InP/GaAs_xSb_1-x/InP double heterojunction bipolar transistors (DHBTs) were studied as a function of the base arsenic (As) mole fraction x. Compared to the devices with a lattice-matched base (x=0.51), a current gain improvement arising principally from a base current reduction is observed in DHBTs having higher As- base mole fractions (and consequently, with a reduced type-II conduction band discontinuity DeltaE_C at the emitter-base junction). Both the surface periphery and the intrinsic recombination currents decrease markedly as the base arsenic concentration increases. The present work therefore unambiguously demonstrates that the emitter type-II conduction band discontinuity between the InP emitter and the GaAs_xSb_1-x base enhances the undesirable emitter-size effects (ESEs) and increases intrinsic recombination currents directly under the emitter contact.

Keywords

III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor heterojunctions; size effect; InP-GaAs_xSb_1-x-InP; arsenic mole fraction; base current reduction; double heterojunction bipolar transistors; emitter-base junction; emitter-size effects; intrinsic recombination currents; static gain characteristics; type-II conduction band discontinuity; Chemical elements; Doping; Double heterojunction bipolar transistors; Electron emission; Gallium arsenide; Indium phosphide; Inductors; Laboratories; Microwave devices; Microwave theory and techniques; Arsenic mole fraction; Band discontinuities; Current gain; Double heterojunction bipolar transistors (DHBTs); Emitter size effects; GaAsSb; Recombination current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702911

Filename

4702911