DocumentCode :
1811704
Title :
Fabrication technology and device performances of ultra-short 30-nn-gate pseudomorphic In0.52Al0.48As/In0.75Ga0.25As HEMTs
Author :
Wichmann, N. ; Shchepetov, A. ; Duszynski, I. ; Roelens, Y. ; Wallart, X. ; Dambrine, G. ; Cappy, A. ; Bollaert, S.
Author_Institution :
Dept. Hyperfreq. et Semi-conducteurs, Inst. d´´Electron., Villeneuve d´´Ascq
fYear :
2008
fDate :
25-29 May 2008
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, we succeed in fabricating ultra short 30 nm gate pseudomorphic high electron mobility transistors (HEMT) with excellent cutoff frequencies. Devices with smaller Schottky barrier layer exhibited a current gain cutoff frequency fT of 450 GHz and a simultaneous maximum oscillation frequency fMAX of 500 GHz. This performance can be attributed to the use of the two-step-recessed gate technology and the maintaining of high aspect ratio in our HEMTs.
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device testing; In0.52Al0.48As-In0.75Ga0.25As; Schottky barrier layer; pseudomorphic HEMT; pseudomorphic high electron mobility transistors; size 30 nm; two-step-recessed gate technology; ultrashort gate; Fabrication; HEMT; InAlAs/InGaAs; InP; cutoff frequency; gate length; high electron mobility transistor; two-step-recessed gate technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
ISSN :
1092-8669
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2008.4702912
Filename :
4702912
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1811704
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