Fabrication technology and device performances of ultra-short 30-nn-gate pseudomorphic In0.52Al0.48As/In0.75Ga0.25As HEMTs

Author

Wichmann, N. ; Shchepetov, A. ; Duszynski, I. ; Roelens, Y. ; Wallart, X. ; Dambrine, G. ; Cappy, A. ; Bollaert, S.

Author_Institution

Dept. Hyperfreq. et Semi-conducteurs, Inst. d´´Electron., Villeneuve d´´Ascq

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

In this paper, we succeed in fabricating ultra short 30 nm gate pseudomorphic high electron mobility transistors (HEMT) with excellent cutoff frequencies. Devices with smaller Schottky barrier layer exhibited a current gain cutoff frequency f_T of 450 GHz and a simultaneous maximum oscillation frequency f_MAX of 500 GHz. This performance can be attributed to the use of the two-step-recessed gate technology and the maintaining of high aspect ratio in our HEMTs.

Keywords

III-V semiconductors; Schottky barriers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device testing; In_0.52Al_0.48As-In_0.75Ga_0.25As; Schottky barrier layer; pseudomorphic HEMT; pseudomorphic high electron mobility transistors; size 30 nm; two-step-recessed gate technology; ultrashort gate; Fabrication; HEMT; InAlAs/InGaAs; InP; cutoff frequency; gate length; high electron mobility transistor; two-step-recessed gate technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702912

Filename

4702912