Title :
Reliable 1550nm SI BH lasers fabricated using an improved Ru precursor
Author :
Lealman, I. ; Dosanjh, S. ; Rivers, L. ; Brien, S.O. ; Cannard, P. ; Sweeney, S.J. ; Marko, I.P. ; Rushworth, S.
Author_Institution :
CIP, Ipswich
Abstract :
We have fabricated and assessed 1550 nm SIBH FP lasers using a novel Ruthenium precursor for MOVPE. Low temperature analysis revealed no unexpected defects and performance is similar to standard p-n-p-n current blocking devices. Accelerated aging at 85degC indicates no significant degradation after 5,700 hours on test.
Keywords :
ageing; semiconductor lasers; vapour phase epitaxial growth; MOVPE; aging; low temperature analysis; ruthenium precursor; semiinsulating BH lasers; semiinsulating FP lasers; size 1550 nm; temperature 85 degC; time 5700 hour; Epitaxial growth; Epitaxial layers; Fabrication; Gas lasers; Indium phosphide; Iron; Performance analysis; Semiconductor lasers; Testing; Zinc; Ru doping; Semi-insulating; Semiconductor laser; component;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702913
