Title :
Barrier/seed layer requirements for copper interconnects
Author :
Wong, S. Simon ; Ryu, Changsup ; Lee, Haebum ; Loke, Alvin L S ; Kwon, Kee-Won ; Bhattacharya, Som ; Eaton, Rory ; Faust, Rick ; Mikkola, Bob ; Mucha, Jay ; Ormando, John
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
The microstructure of electroplated Cu is highly dependent on the characteristics of underlying barrier and seed layers. A smooth and strongly textured Cu seed layer is needed to promote the development of highly textured, large grains in the electroplated Cu film, even in damascene structures. This microstructure is desired for extended reliability
Keywords :
chemical interdiffusion; copper; diffusion barriers; electroplating; grain size; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; surface texture; Cu; barrier layer; copper interconnects; damascene structures; electroplated Cu film; electroplated Cu microstructure; reliability; seed layer; smooth textured Cu seed layer; textured large grains; Atomic force microscopy; Atomic measurements; Copper; Grain size; Microstructure; Rough surfaces; Surface roughness; Surface texture; Tin; Transmission electron microscopy;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704764
