DocumentCode
1811852
Title
The development and application of novel Ru precursors for atmospheric pressure MOVPE growth of Ru doped current blocking layers
Author
Dosanjh, S. ; Cannard, P. ; Firth, R. ; Lealman, I. ; Moore, R. ; Rivers, L. ; Robertson, M. ; Rushworth, S. ; Odedra, R. ; Viswanathan, P. ; Sykes, D.E. ; Chew, A.
Author_Institution
CIP, Ipswich
fYear
2008
fDate
25-29 May 2008
Firstpage
1
Lastpage
3
Abstract
Ru precursors IPCPRu and IBCPRu have been developed as alternatives to DMRu. Stability trials and atmospheric pressure MOVPE growth investigations have led to their successful application for Ru doped InP current blocking layers in laser devices.
Keywords
III-V semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; stability; vapour phase epitaxial growth; wide band gap semiconductors; InP:Ru; MOVPE; Ru precursors; atmospheric pressure; current blocking layers; stability; Chemical lasers; Epitaxial growth; Epitaxial layers; Hydrogen; Indium phosphide; Iron; Laser stability; Testing; Thermal degradation; Zinc; MOVPE; Ru doping; component; current blocking; laser;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location
Versailles
ISSN
1092-8669
Print_ISBN
978-1-4244-2258-6
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2008.4702915
Filename
4702915
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