InP DHBT circuits for 100 Gb/s Ethernet applications

Author

Weimann, Nils G. ; Houtsma, V. ; Baeyens, Y. ; Weiner, J. ; Tate, A. ; Frackoviak, J. ; Chen, Y.K.

Author_Institution

Bell Labs., Alcatel-Lucent, Murray Hill, NJ

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

We present key high-speed analog circuits and digital building blocks realized in our 0.5 mum InP DHBT technology. The transistor cutoff frequency of 400 GHz enables circuits with bandwidth and clock speed suitable for application to 100 Gb/s fiber-optic transmission systems.

Keywords

III-V semiconductors; bipolar analogue integrated circuits; bipolar digital integrated circuits; bipolar transistor circuits; heterojunction bipolar transistors; indium compounds; optical fibre LAN; DHBT circuits; Ethernet; InP; bandwidth; bit rate 100 Gbit/s; clock speed; cutoff frequency; digital building blocks; fiber-optic transmission systems; frequency 400 GHz; high-speed analog circuits; Chemicals; Circuits; Contact resistance; Cutoff frequency; DH-HEMTs; Dry etching; Ethernet networks; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Amplifier; Demux; HBT; Heterostructure; InP; Mux;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702916

Filename

4702916