Title :
InP DHBT circuits for 100 Gb/s Ethernet applications
Author :
Weimann, Nils G. ; Houtsma, V. ; Baeyens, Y. ; Weiner, J. ; Tate, A. ; Frackoviak, J. ; Chen, Y.K.
Author_Institution :
Bell Labs., Alcatel-Lucent, Murray Hill, NJ
Abstract :
We present key high-speed analog circuits and digital building blocks realized in our 0.5 mum InP DHBT technology. The transistor cutoff frequency of 400 GHz enables circuits with bandwidth and clock speed suitable for application to 100 Gb/s fiber-optic transmission systems.
Keywords :
III-V semiconductors; bipolar analogue integrated circuits; bipolar digital integrated circuits; bipolar transistor circuits; heterojunction bipolar transistors; indium compounds; optical fibre LAN; DHBT circuits; Ethernet; InP; bandwidth; bit rate 100 Gbit/s; clock speed; cutoff frequency; digital building blocks; fiber-optic transmission systems; frequency 400 GHz; high-speed analog circuits; Chemicals; Circuits; Contact resistance; Cutoff frequency; DH-HEMTs; Dry etching; Ethernet networks; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Amplifier; Demux; HBT; Heterostructure; InP; Mux;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702916
