Electromigration behaviour of 0.3 μm damascene vs. plasma-etched interconnects: a lifetime and drift analysis

Author

Proost, J. ; Li, H. ; Brijs, B. ; Witvrouw, A. ; Maex, K.

Author_Institution

IMEC, Leuven, Belgium

fYear

1998

fDate

1-3 Jun 1998

Firstpage

110

Lastpage

112

Abstract

The electromigration behaviour of 0.3 μm wide Al(Cu) damascene interconnects has been studied both by lifetime testing and drift experiments and results are compared to equivalent plasma-etched lines. The lifetime degradation observed for the damascene implementation is consistent with the relative contribution of incubation time and diffusivity, as extracted from the drift study. This is shown to be an intrinsic effect related to the different nature of the interfaces in both metallization schemes

Keywords

aluminium alloys; copper alloys; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; interface structure; life testing; sputter etching; 0.3 micron; AlCu; AlCu damascene interconnects; AlCu plasma-etched lines; damascene implementation; damascene interconnects; diffusivity; drift analysis; drift testing; electromigration; incubation time; lifetime analysis; lifetime degradation; lifetime testing; metallization interfaces; metallization schemes; plasma-etched interconnects; Artificial intelligence; Current density; Electromigration; Electron mobility; Inspection; Life testing; Microstructure; Plasmas; Sequential analysis; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704765

Filename

704765