Title :
Impact of V/III ratio, CBr4 and AsH3 concentrations on the MOVPE growth of GaAsSb for InP DHBT applications
Author :
Ostinelli, O. ; Liu, H.G. ; Zeng, Y.P. ; Bolognesi, C.R.
Author_Institution :
Lab. for Field Theor. & Microwave Electron. (IfH), ETH Zurich, Zurich
Abstract :
The impact of growth conditions in the presence of CBr4 is examined for the MOVPE growth of GaAsSb intended for high-performance DHBT applications. We show that the growth is controlled by competing gas phase reactions and by effective V/III flux ratios that can be quite different from those set at the gas inlet. For example, under specific conditions, the C-doping efficiency is shown to increase and then decrease with increasing CBr4 flux.
Keywords :
III-V semiconductors; MOCVD; carbon; gallium arsenide; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; surface chemistry; vapour phase epitaxial growth; GaAsSb:C; MOVPE; boundary layer reactions; doping; double heterojunction bipolar transistors; gas phase reactions; surface reactions; Ash; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Hydrogen; Indium phosphide; Laboratories; Lattices; Microwave theory and techniques; CBr4; GaAsSb; Type-II DHBTs; V/III ratio; alloy composition; gas phase reactions;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702929
