Title :
Ultra low turn-on voltage and high-current InP DHBT with a pseudomorphic In0.37Ga0.63As0.89Sb0.11 base
Author :
Chen, Shu-Han ; Wang, Sheng-Yu ; Chen, HS ln-Yuan ; Teng, Kuo-Hung ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan
Abstract :
We report on the dc and microwave characteristics of an InP/InGaAsSb/InGaAs double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic In0.37Ga0.63As0.89Sb0.11 base reduces the conduction band offset (DeltaEC) at the emitter/base (E/B) junction and the base band gap, which leads to a very low VBE turn-on voltage of 0.35 V at 1 A/cm2. Current gain of 125 and peak fT of 238 GHz have been obtained on the devices with an emitter size of 1times10 mum2, suggesting that high current capability is achieved due to its type-II lineup at the InGaAsSb/InGaAs base/collector (B/C) junction.
Keywords :
III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave transistors; DHBT; InP-InGaAsSb-InGaAs; conduction band offset; dc characteristics; high current; microwave characteristics; pseudomorphic base; ultra low turn-on voltage; Cities and towns; Degradation; Double heterojunction bipolar transistors; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low voltage; Molecular beam epitaxial growth; Photonic band gap; InP/InGaAsSb; component; heterojunction bipolar transistors (HBTs); molecular beam epitaxy (MBE); type-II;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702931
