Preliminary investigations on the Te-doped AlInSb/GaInSb heterostructures for High Electron Mobility Transistor (HEMT) applications

Author

Delhaye, G. ; Desplanque, L. ; Wallart, X.

Author_Institution

Inst. d´´Electron., de Microelectron. et de Nanotechnol., Villeneuve d´´Ascq

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

This work reports on the Te delta-doping of high electron mobility AlInSb/GaInSb heterostructures grown on InP(001). We show a significant increase of the electron sheet density when the delta-doping plane is incorporated in a thin AlSb layer introduced in the barrier. For the first time, AlInSb/GaInSb heterostructures with an electron mobility of 18,000 cm²/V.s and sheet density of 2.2times10¹² cm^-2 at room temperature are demonstrated.

Keywords

III-V semiconductors; aluminium compounds; electron mobility; gallium compounds; high electron mobility transistors; indium compounds; semiconductor heterojunctions; tellurium; AlInSb-GaInSb:Te; HEMT; InP; InP(001) surface; electron sheet density; heterostructures; high electron mobility transistor; temperature 293 K to 298 K; Doping; Effective mass; Electron mobility; HEMTs; Lattices; MODFETs; Performance analysis; Substrates; Tellurium; Temperature; AlInSb/GaInSb structure; Te-σ doping plane; electron mobility;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702932

Filename

4702932