Title :
A W-band InGaAs/InAlAs/InP HEMT Low-Noise Amplifier MMIC with 2.5dB noise figure and 19.4 dB gain at 94GHz
Author :
Mei, X.B. ; Lin, C.H. ; Lee, L.J. ; Kim, Y.M. ; Liu, P.H. ; Lange, M. ; Cavus, A. ; To, R. ; Nishimoto, M. ; Lai, R.
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA
Abstract :
A three-stage W-band InGaAs/InAlAs/InP HEMT Low-Noise Amplifier (LNA) has been fabricated with 0.1mum EBL gate and improved Ohmic contact. A noise figure of 2.5 dB with an associated gain of 19.4 dB is demonstrated at 94 GHz. To our knowledge, it is the best noise/gain performance in a W-band LNA ever reported. A noise figure of 2.7 dB and an associated gain of 14.6 dB is also demonstrated with a dc power of 3.6 mW, making it a viable alternative to the ABCS technology for low dc power LNA applications.
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; ohmic contacts; ABCS technology; InGaAs-InAlAs-InP; LNA; MMIC; dc power; noise figure; ohmic contact; three-stage W-band HEMT low-noise amplifier; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MMICs; Noise figure; Ohmic contacts; Performance gain; (LNA); High electron mobility transisters (HEMT); InGaAs/InAlAs/InP; Ohmic contact; W-band; low-noise amplifier; noise figure (NF);
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702933
