Multilayer 1.4 μm InAs quantum dots with thin spacer using GaNAs strain compensation layer

Author

Suzuki, R. ; Miyamoto, T. ; Sengoku, T. ; Koyama, F.

Author_Institution

Microsyst. Res. Center, Inst. of Technol., Yokohama

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

Multilayer of InAs QD with thin spacer thickness using GaNAs stress compensation layers (SCL) was investigated for the purpose of high modal gain. Multilayer up to 5 layers with 18 nm thin spacer thickness was realized in 1.4 um wavelength range without degradation of optical quality. This result indicates advantage of GaNAs spacer for multi stacking with thin spacer layer thickness.

Keywords

III-V semiconductors; gallium compounds; indium compounds; multilayers; photoluminescence; semiconductor quantum dots; InAs-GaNAs; modal gain; multilayer quantum dots; optical quality; photoluminescence; size 18 nm; stress compensation layers; thin spacer thickness; wavelength 1.4 mum; Capacitive sensors; Gallium arsenide; Indium gallium arsenide; Nonhomogeneous media; Optical materials; Quantum dot lasers; Quantum dots; Space technology; Stress; Vertical cavity surface emitting lasers; GaAs; GaInNAs; Quantum dot; VCSEL; component;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702934

Filename

4702934