Title :
Multilayer 1.4 μm InAs quantum dots with thin spacer using GaNAs strain compensation layer
Author :
Suzuki, R. ; Miyamoto, T. ; Sengoku, T. ; Koyama, F.
Author_Institution :
Microsyst. Res. Center, Inst. of Technol., Yokohama
Abstract :
Multilayer of InAs QD with thin spacer thickness using GaNAs stress compensation layers (SCL) was investigated for the purpose of high modal gain. Multilayer up to 5 layers with 18 nm thin spacer thickness was realized in 1.4 um wavelength range without degradation of optical quality. This result indicates advantage of GaNAs spacer for multi stacking with thin spacer layer thickness.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; multilayers; photoluminescence; semiconductor quantum dots; InAs-GaNAs; modal gain; multilayer quantum dots; optical quality; photoluminescence; size 18 nm; stress compensation layers; thin spacer thickness; wavelength 1.4 mum; Capacitive sensors; Gallium arsenide; Indium gallium arsenide; Nonhomogeneous media; Optical materials; Quantum dot lasers; Quantum dots; Space technology; Stress; Vertical cavity surface emitting lasers; GaAs; GaInNAs; Quantum dot; VCSEL; component;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702934
