DocumentCode
1812414
Title
Radiation hardnessin InGaAsP lasers
Author
Gonda, Shun-ichi
Author_Institution
Dep. of Space Commun. Eng., Fukui Univ. of Technol., Fukui
fYear
2008
fDate
25-29 May 2008
Firstpage
1
Lastpage
3
Abstract
Proton beams with energies of 10 and 200 MeV were irradiated onto the light emitting surfaces of InGaAsP lasers. Threshold current damage factors K were estimated from the experimental results. These were compared with previously reported hardness of neutron- and electron- irradiated InGaAsP lasers.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; proton effects; radiation hardening (electronics); semiconductor lasers; InGaAsP; electron volt energy 10 MeV; electron volt energy 200 MeV; lasers; light emitting surfaces; proton beams; radiation hardness; threshold current damage factors; Electrons; Elementary particle vacuum; Neutrons; Particle beams; Protons; Quantum well lasers; Semiconductor lasers; Space technology; Surface emitting lasers; Threshold current; InGaAsP laser; proton irradiation; radiation hardness; semiconductor laser; threshold current damage factor;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location
Versailles
ISSN
1092-8669
Print_ISBN
978-1-4244-2258-6
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2008.4702936
Filename
4702936
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