Title :
755-nm InGaAsP laser diodes
Author :
Nomoto, E. ; Taniguchi, T. ; Ohtoshi, T. ; Funane, T. ; Saito, K. ; Sasaki, S.
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Kokubunji
Abstract :
A 755-nm InGaAsP quantum-well laser on a GaAs substrate was fabricated. With AlGaInP cladding layers, the ridge-waveguide structure of the laser has an extremely high characteristic temperature of 213 K under ambient temperatures of 20 to 80degC.
Keywords :
III-V semiconductors; aluminium compounds; claddings; gallium arsenide; gallium compounds; indium compounds; integrated optics; quantum well lasers; ridge waveguides; semiconductor quantum wells; GaAs; InGaAsP-AlGaInP; characteristic temperature; cladding layers; laser diodes; quantum-well laser; ridge-waveguide structure; temperature 20 degC to 80 degC; temperature 213 K; wavelength 755 nm; Diode lasers; Gallium arsenide; Laboratories; Laser modes; Light sources; Optical waveguides; Pump lasers; Quantum well lasers; Temperature; Waveguide lasers; 755-nm; AlGaInP; InGaAsP; biological; laser; medical; single mode;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702937
