DocumentCode
1812427
Title
755-nm InGaAsP laser diodes
Author
Nomoto, E. ; Taniguchi, T. ; Ohtoshi, T. ; Funane, T. ; Saito, K. ; Sasaki, S.
Author_Institution
Central Res. Lab., Hitachi, Ltd., Kokubunji
fYear
2008
fDate
25-29 May 2008
Firstpage
1
Lastpage
4
Abstract
A 755-nm InGaAsP quantum-well laser on a GaAs substrate was fabricated. With AlGaInP cladding layers, the ridge-waveguide structure of the laser has an extremely high characteristic temperature of 213 K under ambient temperatures of 20 to 80degC.
Keywords
III-V semiconductors; aluminium compounds; claddings; gallium arsenide; gallium compounds; indium compounds; integrated optics; quantum well lasers; ridge waveguides; semiconductor quantum wells; GaAs; InGaAsP-AlGaInP; characteristic temperature; cladding layers; laser diodes; quantum-well laser; ridge-waveguide structure; temperature 20 degC to 80 degC; temperature 213 K; wavelength 755 nm; Diode lasers; Gallium arsenide; Laboratories; Laser modes; Light sources; Optical waveguides; Pump lasers; Quantum well lasers; Temperature; Waveguide lasers; 755-nm; AlGaInP; InGaAsP; biological; laser; medical; single mode;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location
Versailles
ISSN
1092-8669
Print_ISBN
978-1-4244-2258-6
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2008.4702937
Filename
4702937
Link To Document