Title :
Analysis of the thermal effects of GaAs FETs under the high-power electromagnetic pulses
Author :
Xu, Jianfeng ; Yin, Wen-Yan ; Mao, Jun-Fa ; Li, Le-Wei ; Drewniak, James L.
Author_Institution :
Sch. of Electron. Inf. & Electr. Eng., Shanghai Jiao Tong Univ., Shanghai
Abstract :
In this paper, the transient thermal characteristics of GaAs field-effect transistors (FETs) in the presence of high- power electromagnetic pulses (HP-EMP) are investigated. By hybrid finite element methods which combining element-by- element finite element method (EBE-FEM) with the preconditioned conjugate gradient (PCG) technique, transient thermal responses including the maximum channel temperature of GaAs FETs and the maximum input power density of the thermal sources are extracted which will be useful for further taking thermal protection so as to prevent on-chip device breakdown from the attack of a HP-EMP.
Keywords :
III-V semiconductors; conjugate gradient methods; electromagnetic pulse; field effect transistors; finite element analysis; gallium arsenide; thermal analysis; GaAs; GaAs FET; field-effect transistors; high-power electromagnetic pulses; hybrid finite element methods; maximum channel temperature; on-chip device breakdown; preconditioned conjugate gradient technique; thermal effects analysis; transient thermal characteristics; EMP radiation effects; Electric breakdown; Electromagnetic analysis; Electromagnetic fields; Electromagnetic transients; FETs; Finite element methods; Gallium arsenide; Protection; Temperature; FEM; GaAs field-effect transistors (FETs); High-power electromagnetic pulse (HP-EMP); breakdown;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1879-4
Electronic_ISBN :
978-1-4244-1880-0
DOI :
10.1109/ICMMT.2008.4540713
