Epitaxial growth of high quality InAs/InGaAlAs quantum dash-in-well structure on InP

Author

Wang, Y. ; Djie, H.S. ; Hongpinyo, V. ; Tan, C.L. ; Ooi, B.S. ; Hwang, J. C M ; Fang, X.-M. ; Wu, Y. ; Fastenau, J.M. ; Liu, W.K. ; Dang, G.T. ; Chang, W.H.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

We report on the growth of InAs quantum-dash in InGaAlAs quantum-well structure on InP substrate using molecular beam epitaxy. The influence of different growth parameters such as InAs layer thickness, quantum barrier growth temperature, and number of stacking layers on the morphology and optical properties of dash structures were studied. The results serve as useful references for improved epitaxial growth control of InAs/InGaAlAs/InP system for optical device applications.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; InAs-InGaAlAs; InP; growth parameters; molecular beam epitaxy; optical properties; photoluminescence; quantum barrier growth temperature; quantum-dash; quantum-well structure; stacking layers; Epitaxial growth; Indium phosphide; Molecular beam epitaxial growth; Morphology; Optical control; Quantum dots; Quantum wells; Stacking; Substrates; Temperature; InP; dash-in-well; epitaxial growth; quantum dash;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702939

Filename

4702939