Title :
Uniform (111) textured Cu CVD on vacuum annealed Cu seed layer
Author :
Ueno, Kazuyoshi ; Sekiguchi, Atsushi ; Kobayashi, Akiko
Author_Institution :
NEC Corp., Sagamihara, Japan
Abstract :
The vacuum anneal effects of the Cu seed on Cu CVD have been investigated. The vacuum anneal removes the surface oxide of the air-exposed Cu seed and enhances the (111) texture of the seed. The incubation period which has been observed with the air-exposed Cu seed has been eliminated by the vacuum anneal and better film morphology and improved sheet resistance uniformity has been obtained. Epitaxial CVD has been observed on the vacuum annealed seed and led to the enhanced (111) texture
Keywords :
annealing; chemical vapour deposition; copper; crystal morphology; electric resistance; integrated circuit interconnections; integrated circuit metallisation; oxidation; surface texture; Cu; Cu CVD; Cu seed; Cu(111) texture; CuO-Cu; air-exposed Cu seed; enhanced (111) texture; epitaxial CVD; film morphology; incubation period; sheet resistance uniformity; surface oxide; uniform textured Cu(111) CVD; vacuum anneal; vacuum anneal effects; vacuum annealed Cu seed layer; vacuum annealed seed; Annealing; Cooling; Fluctuations; Grain size; Impurities; Microstructure; Surface morphology; Surface resistance; Tin; X-ray scattering;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704768
