DocumentCode
181247
Title
Table of contents
fYear
2014
fDate
15-19 June 2014
Firstpage
1
Lastpage
13
Abstract
The following topics are dealt with: diodes; IGBT; GaN devices;SiC devices; superjunction devices; wide bandgap power devices; packaging; power MOSFET; reliability; LV power IC; HV power IC; gate drivers and digital isolators.
Keywords
III-V semiconductors; driver circuits; gallium compounds; insulated gate bipolar transistors; integrated circuit packaging; integrated circuit reliability; power MOSFET; power integrated circuits; power semiconductor diodes; semiconductor device packaging; semiconductor device reliability; silicon compounds; wide band gap semiconductors; GaN; HV power IC; IGBT; LV power IC; SiC; digital isolator; diode; gate driver; packaging; power MOSFET; reliability; superjunction device; wide bandgap power device;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location
Waikoloa, HI
ISSN
1943-653X
Print_ISBN
978-1-4799-2917-7
Type
conf
DOI
10.1109/ISPSD.2014.6855958
Filename
6855958
Link To Document