Title :
Table of contents
Abstract :
The following topics are dealt with: diodes; IGBT; GaN devices;SiC devices; superjunction devices; wide bandgap power devices; packaging; power MOSFET; reliability; LV power IC; HV power IC; gate drivers and digital isolators.
Keywords :
III-V semiconductors; driver circuits; gallium compounds; insulated gate bipolar transistors; integrated circuit packaging; integrated circuit reliability; power MOSFET; power integrated circuits; power semiconductor diodes; semiconductor device packaging; semiconductor device reliability; silicon compounds; wide band gap semiconductors; GaN; HV power IC; IGBT; LV power IC; SiC; digital isolator; diode; gate driver; packaging; power MOSFET; reliability; superjunction device; wide bandgap power device;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6855958
