Title :
The effect of thermal cycling on a-C:F,H low dielectric constant films deposited by ECR plasma enhanced chemical vapor deposition
Author :
Theil, Jeremy A. ; Kooi, Gerrit ; Mertz, Francoise ; Ray, Gary ; Seaward, Karen
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
Thin films of a-C:F,H have been investigated to understand the effect of post-deposition annealing on density, dielectric constant, and composition. Although the initial dielectric constant value for the films was 3.2, the value decreased to about 2.4, and the loss tangent decreased from 0.12 to 0.03 after heating to 400°C. Correspondingly, the film density decreased on the order of 10%, and an increase in the C=C content of the infrared spectra was observed. Most of these measured properties reached at least 75% of their final value within 5 minutes annealing. These results suggest that a more open film network is the basis of the lower dielectric constant
Keywords :
amorphous state; annealing; carbon; dielectric losses; dielectric thin films; fluorine; hydrogen; infrared spectra; integrated circuit interconnections; integrated circuit metallisation; permittivity; plasma CVD; thermal analysis; thermal stresses; 400 C; 5 min; C:F,H; ECR plasma enhanced chemical vapor deposition; a-C:F,H low dielectric constant films; a-C:F,H thin films; annealing; dielectric constant; film composition; film density; infrared spectra; initial dielectric constant; loss tangent; open film network; post-deposition annealing; thermal cycling effects; Annealing; Density measurement; Dielectric constant; Dielectric materials; Etching; Infrared spectra; Optical films; Plasma applications; Plasma chemistry; Plasma density;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704770
