Title :
Virtual testing of high power devices at the rim of the safe operating area and beyond
Author_Institution :
Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Munich, Germany
Abstract :
The development of high-performance power devices is increasingly supported by predictive computer simulations on the basis of well-calibrated physical device models. Today´s challenge is to make virtual experiments and tests on the computer, which are qualitatively reliable and quantitatively accurate even for device structures that have never been built before, and under operational conditions that very rarely occur as long as the device is kept within the “safe operating area (SOA)”. What we are interested in is to explore the rim of the SOA and even to go beyond it in order to study failure and, eventually, destruction mechanisms with a view to improving robustness and reliability of the devices. In particular in the field of high power electronics, predictive high-fidelity computer simulations of “virtual desctruction” are of utmost importance. We will illustrate today´s state of the art with reference to selected real-life examples.
Keywords :
electronic engineering computing; power semiconductor devices; semiconductor device reliability; semiconductor device testing; SOA; destruction mechanisms; device reliability; device structures; high-performance power devices; predictive high-fidelity computer simulations; safe operating area; virtual testing; well-calibrated physical device models; Absorption; Arrays; Computational modeling; Computer simulation; Numerical models; Predictive models; Temperature measurement;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6855963