DocumentCode
181254
Title
Virtual testing of high power devices at the rim of the safe operating area and beyond
Author
Wachutka, G.
Author_Institution
Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Munich, Germany
fYear
2014
fDate
15-19 June 2014
Firstpage
6
Lastpage
11
Abstract
The development of high-performance power devices is increasingly supported by predictive computer simulations on the basis of well-calibrated physical device models. Today´s challenge is to make virtual experiments and tests on the computer, which are qualitatively reliable and quantitatively accurate even for device structures that have never been built before, and under operational conditions that very rarely occur as long as the device is kept within the “safe operating area (SOA)”. What we are interested in is to explore the rim of the SOA and even to go beyond it in order to study failure and, eventually, destruction mechanisms with a view to improving robustness and reliability of the devices. In particular in the field of high power electronics, predictive high-fidelity computer simulations of “virtual desctruction” are of utmost importance. We will illustrate today´s state of the art with reference to selected real-life examples.
Keywords
electronic engineering computing; power semiconductor devices; semiconductor device reliability; semiconductor device testing; SOA; destruction mechanisms; device reliability; device structures; high-performance power devices; predictive high-fidelity computer simulations; safe operating area; virtual testing; well-calibrated physical device models; Absorption; Arrays; Computational modeling; Computer simulation; Numerical models; Predictive models; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location
Waikoloa, HI
ISSN
1943-653X
Print_ISBN
978-1-4799-2917-7
Type
conf
DOI
10.1109/ISPSD.2014.6855963
Filename
6855963
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