Integration of organic low-k material with Cu-damascene employing novel process

Author

Ikeda, Wasanobu ; Kudo, Hiroshi ; Shinohara, Rika ; Shimpuku, Fumihiko ; Yamada, Makoto ; Furumura, Yuji

Author_Institution

Fujitsu Labs. Ltd., Kawasaki, Japan

fYear

1998

fDate

1-3 Jun 1998

Firstpage

131

Lastpage

133

Abstract

In order to realize the fabrication of an ultra-large-scale-integrated (ULSI) circuit with high performance, a novel integration process for Cu-damascene structures employing a low dielectric constant (low-k) material as interlayer dielectric is proposed. In this process, a USG formed organic low-k material is used as a hard mask and a CMP stopper. This enables us to simplify the total process and fabricate two-level Cu metallization successfully

Keywords

ULSI; chemical mechanical polishing; copper; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; masks; permittivity; CMP stopper; Cu-damascene; Cu-damascene structures; ULSI fabrication; USG formed organic low-k material; dielectric constant; hard mask; low-k interlayer dielectric; organic low-k material; process integration; two-level Cu metallization; ultra-large-scale-integrated circuit; Annealing; Dielectric constant; Dielectric materials; Metallization; Organic materials; Resists; Sputter etching; Sputtering; Thermal stability; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704771

Filename

704771